PTFB213004F_16 Datasheet, PDF (1/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz

PTFB213004F
High Power RF LDMOS Field Effect Transistor
300 W, 2110 – 2170 MHz
Description
The PTFB213004F is a 300-watt LDMOS FET designed for class
AB operation in cellular amplifiers covering the 2110 to 2170 MHz
frequency band. Features include high peak power, input and
output match, and a thermally-enhanced, open-cavity earless ceramic
package.
PTFB213004F
Package H-37275-6/2
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 7.5 dB,
3.84 MHz bandwidth
-10
50
-20
40
Efficiency
-30
30
-40
ACP low
-50
-60
34
ACP up
38
42
46
50
Output Power, avg. (dBm)
20
10
0
54
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
• Typical single-carrier WCDMA performance at
2170 MHz, 30 V
- P_OUT = 49.5 dBm Avg
- Gain = 17.5 dB
- Efficiency = 30%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 300 W
(CW) output power
• Excellent thermal stability
• Integrated ESD protection
• Pb-free and RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.4 A, P_OUT = 60 W average,
ƒ₁ = 2167.5 MHz, ƒ₂ = 2172.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
17
18
hD
25
26.5
IMD
—
–36
Max
—
—
–33
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 16
Rev. 05.3, 2016-06-15