PTFB213004F_16 Datasheet, PDF (15/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz

PTFB213004F
Package Outline Specifications
Package H-37275-6/2
2X 45° X 1.19
[45° X .047]
2X 30°
V1
D1
13.716
[.540]
CL
31.750
[1.250]
2X 2.032
[.080]
REF
D2
9.398
[.370]
4X
R0.508
+.381
-.127
[
R.020
+.015
-.005
]
2.134
[.084] SPH
1.626
[0.064]
G1
CL
31.242±0.280
[1.230±.011]
CL
G2
CL
4X 11.684
[.460]
2X 3.175
[.125]
2X 1.143
[.045]
V2
3.226±0.508
[.127±.020]
CL _9.144
[.360]
10.160
[.400]
16.612±.500
[.654±.020]
4.585+-00.1.22570
[ ^.180
+.010
-.005
]
h-37275-6-2_po_02_08-13-2012
32.258
[1.270]
S

Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
Diagram N₂o_.tes_P—_riu_mn_ale_ryss_dio_mth_ee_nr_sw_iois_ne_ss_ap_re_ec_mifi_med_.:_{Alternate dimensions are inches.}
1. In₃te_. rp_Are_llt_td_oi_lm_ere_an_ns_ci_eo_sns_±0a_.n₁d₂₇to_[l₀e_.r₀a₀n₅c_]e_us_np_lee_sr _sA_sS_pM_eE_cifY_ie1_d4._o5_tM_he-_r1_w9_i9_s4_e._.
2.
3.
P₄ri_.ma_Pry_ind_si_:m_De₁n_,s_Dio₂n_–s _da_rr_ae_inm_;m_G.₁A_, l_Gte₂rn_–a_gte_atd_eim_{; S}en_–s_sio_on_us_rca_er_;e_Vi₁n_,c_Vhe₂s_–.
A₅ll_.tol_Le_era_an_dc_te_hs_ic±_kn0_e.1_s2_s:7₀[_..₁0₂0₇5]_±u₀n_.le₀s₅s₁ s_mp_mec_[if₀ie_.0d₀o₅th_±e₀rw_.0i₀s₂e._inch].
V_DD
4. P₆in_.s: _GG_o1_l,_dG_p2_la=_ting_gat_te_h;_icD_k1_n,_eD_ss2_: =_1.1d₄ra_±in;₀S_.38= _mso_icu_rr_oc_ne;_[V₄₅1,_±V₁2₅=_mV_iDcrDo._{inch] max.}
5. Lead thickness: 0.127 ± 0.051 [.005 ±.002].
6. Gold plating thickness: 1.1 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
15 of 16
Rev. 05.3, 2016-06-15