PTFB183408SV Datasheet, PDF (6/15 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

Typical Performance (cont.)
Single-carrier Broadband Performance
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 125 W
35
30
25
20
15
10
5
0
-5
1693
Efficiency
RL
Gain
PARC
ACP
1768
1843
1918
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
-35
-40
1993
PTFB183408SV
Single-carrier Drive-up, 1880 MHz
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
20
40
Gain
16
20
Efficiency
12
0
PARC @ .01% CCDF
8
-20
4
-40
ACP
0
-60
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Single-carrier Drive-up, 1842 MHz
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1842 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
20
40
Gain
16
20
Efficiency
12
0
PARC @ .01% CCDF
8
-20
4
ACP
-40
0
-60
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Single-carrier Drive-up, 1805 MHz
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1805 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
20
40
Gain
16
20
E f f ic ienc y
12
0
PARC @ .01% CCDF
8
-20
4
ACP
-40
0
-60
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Data Sheet
6 of 15
Rev. 03, 2014-03-07