PTFB183408SV Datasheet, PDF (13/15 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB183408SV
Reference Circuit (cont.)
Components Information
Component
Description
Input
C101, C110
Chip capacitor, 4.7 µF
C102, C105
Chip capacitor, 0.1 µF
C103
Chip capacitor, 0.7 pF
C104, C108, C109
Chip capacitor, 10 pF
C106, C107
Chip capacitor, 1.7 pF
C111, C112
Chip capacitor, 10 pF
C801, C802, C803
Chip capacitor, 1000 pF
R101, R102, R105, R803,
R804
Resistor, 10 Ω
R103, R104
R801
Resistor, 10 Ω
Resistor, 1200 Ω
R802
S1
Resistor, 1300 Ω
Potentiometer, 2k Ω
S2
Transistor
S3
Voltage Regulator
Output
C201
C202, C207
C203, C204
C205, C206
C208
C209
C210, C211, C212, C213
C214, C215
C216
Chip capacitor, 1.4 pF
Chip capacitor, 10 µF
Tantalum capacitor, 10 µF
Chip capacitor, 2.2 µF
Chip capacitor, 0.4 pF
Chip capacitor, 1.8 pF
Chip capacitor, 1.3 pF
Chip capacitor, 1 µF
Chip capacitor, 10 pF
Pinout Diagram
V1
D1
G1
V2
D2
S
G2
H-34275G-6-2_gw_pd_10-10-2012
Suggested Manufacturer P/N
Panasonic Electronic Components
Panasonic Electronic Components
ATC
ATC
ATC
ATC
Panasonic Electronic Components
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ERJ-8GEYJ100V
Panasonic Electronic Components
Panasonic Electronic Components
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Infineon Technologies
Texas Instruments
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BCP56
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ATC
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C4532X7R2A105M230KA
ATC100B100JW500XB
Pin Description
V1
V_DD Device 1
V2
V_DD Device 2
G1
Gate Device 1
G2
Gate Device 2
D1
Drain Device 1
D2
Drain Device 2
S
Source (flange)
Data Sheet
13 of 15
Rev. 03, 2014-03-07