PTFB183408SV Datasheet, PDF (14/15 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB183408SV
Package Outline Specifications
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Package H-37275G-6/2 with Formed Leads

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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – V_DD.
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
14 of 15
Rev. 03, 2014-03-07