PTFB183408SV Datasheet, PDF (1/15 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB183408SV
High Power RF LDMOS Field Effect Transistor
340 W, 30 V, 1805 – 1880 MHz
Description
The PTFB183408SV is a 340-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 1805 to
1880 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB183408SV
Package H-37275G-6/2
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 8:1,
10 MHz carrier spacing, BW = 3.84 MHz
-25
35
-30
30
-35
IMD Low
25
IMD Up
-40
20
-45
15
-50
ACPR
10
-55
Efficiency
5
-60
b183408sv gr1
0
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 300 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (device with straight leads, combined outputs—tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.65 A, P_OUT = 80 W average, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Min
Typ
Max
Unit
G_ps
16
17
—
dB
η_D
24
25.5
—
%
IMD
—
–35
–34
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 03, 2014-03-07