PTFB183408SV Datasheet, PDF (2/15 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFB183408SV
RF Characteristics (cont.)
Single-carrier WCDMA Specifications (not subject to production test – verified by design / characterization in Infineon
test fixture)
V_DD = 30 V, I_DQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic
Conditions
Symbol 1805 MHz 1842 MHz 1880 MHz Unit
(Typ)
(Typ)
(Typ)
Gain
P_OUT (AVG) = 49 dBm
G_ps
17.1
17.3
17.5
dB
Drain Efficiency
P_OUT (AVG) = 51 dBm
P_OUT (AVG) = 49 dBm
η_D
17.0
25
17.15
24.5
17.4
24
%
P_OUT (AVG) = 51 dBm
31
30
30
Output PAR at 0.01%
P_OUT (AVG) = 49 dBm
dB
6.5
6.5
6.5
dB
P_OUT (AVG) = 51 dBm
5.5
5.5
5.5
Adjacent Channel Power Ratio P_OUT (AVG) = 49 dBm ACPR
–43
–42.5
–41
dBc
P_OUT (AVG) = 51 dBm
–36
–35
–34
Two-tone Specifications (not subject to production test – verified by design / characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 310 W PEP, ƒ = 1880 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Min
Typ
Max Unit
G_ps
—
17.5
—
dB
η_D
—
35
—
%
IMD
—
30
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1.0
µA
Drain Leakage Current
On-State Resistance
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
I_DSS
R_DS(on)
—
—
10.0
µA
—
0.05
—
Ω
Operating Gate Voltage
V_DS = 30 V, I_DQ = 2.6 A
V_GS
2.3
2.8
3.3
V
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1.0
µA
Data Sheet
2 of 15
Rev. 03, 2014-03-07