PTFA212401E Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2080
2110
2140
2170
2200
Z Source Ω
R
jX
10.050
–4.250
9.750
–4.320
9.500
–4.380
9.280
–4.350
9.000
–4.460
Z Load Ω
R
jX
1.140
2.07
1.080
2.38
1.090
2.65
1.130
2.89
1.450
3.11
Data Sheet
6 of 11
PTFA212401E
PTFA212401F
Z₀ = 50 Ω
Z Load
2200 MHz
2080 MHz
Z Source
2080 MHz
2200 MHz
0.1
0.2
Rev. 04, 2009-10-05