PTFA212401E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 2140 MHz
17
65
16
55
Gain
15
45
14
13
12
0
35
T_CASE = 25°C
Efficiency ^{TCASE = 90°C}
40
80 120 160 200
Output Power (W)
25
15
240
PTFA212401E
PTFA212401F
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 30 V I_DQ = 1600 mA , ƒ = 2140 MHz,
-20
P_OUT = 53 dBm PEP
-25
3rd Order
-30
-35
-40
7th
-45
-50
5th
-55
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Voltage Sweep
I_DQ = 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10
50
Efficiency
-20
40
-30
-40
-50
24
IM3 Up
Gain
26
28
30
Supply Voltage (V)
30
20
10
32
Intermodulation Distortion Products
vs. Output Power
V_DD = 30 V, I_DQ = 1600 m A,
ƒ₁ = 2137.5 MHz, ƒ₂ = 2142.5 MHz
-20
Up
Low
-30
IM3
IM5
-40
-50
-60
10
IM7
100
Output Power, PEP (W)
1000
Data Sheet
4 of 11
Rev. 04, 2009-10-05