PTFA212401E Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

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Package Outline Specifications (cont.)
Package H-37260-2
45° X 2.03
[45° X .080]
2X 12.70
[.500]
D
4.83±0.50
[.190±.020]
PTFA212401E
PTFA212401F
23.37±0.51
[.920±.020]
CL
[ ] LID 13.21+-00.1.150
.520+-.0.00064
13.72
[.540]
[ ] R0.508+-00.1.32871
R.020+-.0.00155
G
C66065-A2325-C001-01-0027
CL
1.02
[.040]
S
LID 22.35±0.23
[.880±.009]
CL
23.11
[.910]
SPH 1.57
[.062]
4.11±0.38
[.162±.015]
0.0381 [.0015] -A-
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Primary dimensions are mm. Alternate dimensions are inches.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 04, 2009-10-05