PTFA212401E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Ordering Information
PTFA212401E
PTFA212401F
Type and Version
PTFA212401E V4
PTFA212401F V4
Package Outline
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tray
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Selected Biases
V_DD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
series show I_DQ
-30
-35
2.2 A
2.0 A
1.8 A
-40
-45
1.4 A
1.6 A
-50
-55
34
36
38
40
42
44
46
Output Power, PEP (dBm)
Broadband Performance
V_DD = 30 V, I_DQ = 1600 m A, P_OUT = 50 W
40
35
30
25
20
15
10
2050
Return Loss
Efficiency
Gain
2080
2110 2140 2170
Frequency (MHz)
-5
-10
-15
-20
-25
-30
-35
2200
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 04, 2009-10-05