PTFA212401E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power Levels
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
10
1
52 dBm
0.1
51 dBm
48 dBm
46 dBm
Input
0.01
50 dBm
0.001
1
2
3
4
5
6
7
8
Peak-to-Average (dB)
PTFA212401E
PTFA212401F
Power Gain vs. Power Sweep (CW) over
Temperature
V_DD = 30 V, I_DQ = 1500 mA, ƒ = 2140 MHz
18
17 ^-15C
25C
16
85C
15
14
13
12
1
10
100
Output Power (W)
1000
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
44
50
Efficiency
45
40
IM3
35
IM5
30
25
20
IM7
15
46
48
50
52
Output Power, PEP (dBm)
10
54
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing
-25
35
-30
Efficiency ₃₀
IM3
-35
25
-40
20
-45
15
-50
ACPR
10
-55
5
34 36 38 40 42 44 46 48
Output Power, avg. (dBm)
Data Sheet
5 of 11
Rev. 04, 2009-10-05