PTFA212401E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz

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Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA212401E
Package H-36260-2
PTFA212401F
Package H-37260-2
PTFA212401E
PTFA212401F
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
-30
35
-35
30
ACPR Up
-40
25
-45
ACPR Low
20
-50
15
-55
-60
36
Efficiency
38
40
42
44
46
Average Output Power (dBm)
10
5
48
Features
• Thermally-enhanced packages, Pb-free and
RoHS compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8 dB
- Average output power = 47.0 dBm
- Linear Gain = 15.8 dB
- Efficiency = 28%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –40 dBc
• Typical single-carrier WCDMA performance at
2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 15.8 dB
- Efficiency = 34%
- Adjacent channel power = –33 dBc
• Typical CW performance, 2140 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V,
240 W (CW) output power
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2009-10-05