PTFA181001E Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

Typical Performance (cont.)
Three-Carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 750 m A, ƒ = 1880 MHz
40
35
30
25
Efficiency
20
15
ACP Up
10
ALT Up
5
ACP Low
0
33 35 37 39 41 43 45
Output Power, Avg. (dBm)
-35
-40
-45
-50
-55
-60
-65
-70
-75
47
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1805
1830
1850
1860
1880
Z Source Ω
R
jX
4.62
–6.23
4.18
–6.10
4.20
–6.13
4.58
–6.20
4.42
–6.36
Data Sheet
Z Load Ω
R
jX
1.71
2.79
1.41
2.92
1.47
3.05
1.99
3.13
1.91
3.16
6 of 11
PTFA181001E
PTFA181001F
Z₀ = 50 Ω
Z Load
1880 MHz
1805 MHz
Z Source
1805 MHz
0.1
1880 MHz
Rev. 02.1, 2009-02-20