PTFA181001E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

PTFA181001E
PTFA181001F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
16
16.5
η_D
39
41
IMD
—
–30
Max
—
—
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_D = 750 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.85
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 100 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
407
2.33
–40 to +150
0.43
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA181001E V4
PTFA181001F V4
Package Type
H-36248-2
H-37248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA181001E
PTFA181001F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 02.1, 2009-02-20