PTFA181001E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

PTFA181001E
PTFA181001F
Typical Performance (data taken in a production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V_DD = 28 V, ƒ = 1879.8 MHz, P_OUT = 46.5 dBm
2.6
-10
2.4
-20
2.2
EVM
-30
2.0
-40
1.8
-50
1.6
-60
1.4
400 kHz _-70
1.2
600 kHz _-80
1.0
-90
0.65 0.70 0.75 0.80 0.85 0.90
Quiescent Current (A)
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1879.8 MHz
-20
-40
400 kHz
-60
45
Efficiency
35
25
-80
600 kHz
15
-100
5
37
39
41
43
45
47
49
Output Power (dBm)
EDGE EVM Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1879.8 MHz
8
45
Efficiency
6
35
4
25
2
15
EVM
0
5
37
39
41
43
45
47
49
Output Power (dBm)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 750 mA, ƒ₁ = 1879 MHz, ƒ₂ = 1880 MHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
37
3rd Order
5th
7th
39 41 43 45 47 49
Output Power, Avg. (dBm)
Data Sheet
3 of 11
Rev. 02.1, 2009-02-20