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PTFA181001E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz
PTFA181001E
PTFA181001F
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1805 – 1880 MHz
Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs
designed for EDGE and WCDMA power amplifier applications in the
DCS band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA181001E
Package H-36248-2
PTFA181001F
Package H-37248-2
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-23
35
Efficiency
-28
30
-33
IM3
25
-38
20
-43
15
-48
-53
34
ACPR 10
5
36
38
40
42
44
46
Average Output Power (dBm)
Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance at 1879.8 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
• Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 45 W, ƒ = 1879.8 MHz
Characteristic
Symbol Min Typ
Max
Unit
Error Vector Magnitude
RMS EVM
—
1.8
—
%
Modulation Spectrum @ 400 KHz
ACPR
—
–61
—
dBc
Modulation Spectrum @ 600 KHz
ACPR
—
–73
—
dBc
Gain
Drain Efficiency
Gps
—
16.5
—
dB
ηD
—
36
—
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02.1, 2009-02-20