PTFA181001E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

Typical Performance (cont.)
Broadband CW Performance (at P-1dB)
V_DD = 28 V, I_DQ = 750 m A
19
60
18
Efficiency 55
17
16
Gain
15
Output Power ⁵⁰
45
40
14
1805
1818
1831 1844 1857
Frequency (MHz)
1870
35
1883
PTFA181001E
PTFA181001F
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 1879, ƒ₂ = 1880 MHz
-20
-25
-30 _{IDQ = 375 mA}
-35
-40 I_DQ = 1125 mA
-45
-50
-55 ^IDQ ^{= 750 mA}
-60
37 39 41 43 45 47 49
Output Power, Avg. (dBm)
Linear Broadband Performance
V_DD = 28 V, I_DQ = 750 m A, P_OUT Avg = 47 dBm
55
40
50
30
45
Gain ₂₀
40
Efficiency
35
30
10
0
Return Loss
-10
25
-20
20
1805
1818
1831 1844 1857
Frequency (MHz)
1870
-30
1883
Power Sweep
V_DD = 28 V, ƒ = 1880 MHz
17.5
17.0 ^{IDQ = 1125 m A}
16.5 _{IDQ = 750 mA}
16.0
15.5
15.0
I_DQ = 375 mA
14.5
14.0
36 38 40 42 44 46 48 50 52
Output Power (dBm)
Data Sheet
4 of 11
Rev. 02.1, 2009-02-20