PTFA181001E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz

Typical Performance (cont.)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1880 MHz
18
65
17
55
Gain
16
45
15
35
14
25
Efficiency
13
15
12
5
36 38 40 42 44 46 48 50 52
Output Power (dBm)
PTFA181001E
PTFA181001F
Output Power (P–1dB) vs. Drain Voltage
I_DQ = 750 mA, ƒ = 1880 MHz
52
51
50
49
24
26
28
30
32
Drain Voltage (V)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1880 MHz
T_CASE = 25°C
35 _{TCASE = 90°C}
30
Efficiency
-10
-20
25
-30
20 ^{ACP FC – 0.75 MHz}
-40
15
-50
10
-60
5
ACPR F_C + 1.98 MHz ^-70
0
-80
33 35 37 39 41 43 45 47
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
0
20
40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 02.1, 2009-02-20