BTM7755G Datasheet, PDF (6/24 Pages) Infineon Technologies AG – High Current H-Bridge Trilith IC 3G

High Current H-Bridge
BTM7755G
General Product Characteristics
5
General Product Characteristics
5.1
Absolute Maximum Ratings
Absolute Maximum Ratings ¹⁾
T_j = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values Unit
Min.
Max.
5.1.1
5.1.2
Supply voltage
Logic Input Voltage
5.1.3 HS/LS continuous drain current
5.1.4 Voltage at ST pin
5.1.5 ST pin continuous current
5.1.6 ST pin peak current
Thermal Maximum Ratings
V_S
-0.3
45
V
V_IN1,V_IN2, -0.3
5.5
V
V_INH
I_D(HS)
-4
4
A
I_D(LS)
V_ST
-0.3
45
V
I_ST
0
2
mA
I_ST
0
4
mA
5.1.7
5.1.8
Junction temperature
Storage temperature
T_j
-40
T_stg
-55
150
°C
150
°C
ESD Susceptibility
5.1.9 ESD susceptibility
V_ESD
kV
Conditions
–
–
T_C < 85°C
switch active
–
–
t_peak < 10µs
–
–
HBM²⁾
IN1, IN2, ST, INH
-2
2
OUT1, OUT2, GND, VS
-4
4
1) Not subject to production test, specified by design.
2) HBM according to EIA/JESD 22-A 114B (1.5 kΩ, 100pF)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
6
Rev. 2.0, 2010-05-28