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BTM7755G Datasheet, PDF (12/24 Pages) Infineon Technologies AG – High Current H-Bridge Trilith IC 3G | |||
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6.2.2 Switching Times
IN
V OUT
90%
40%
tdr(HS )
t r(HS )
ÎVOU T
High Current H-Bridge
BTM7755G
Block Description and Characteristics
t df (HS ) tf (HS )
ÎVOU T
t
90%
40%
t
Figure 8 Definition of switching times high side (Rload to GND)
IN
V OUT
tdf (LS )
tf (LS )
t
t dr(LS ) tr(LS )
60%
ÎVOUT
60%
ÎVOUT
10%
10%
t
Figure 9 Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
⢠ÎtHS = (tdr(HS) + 0.2 tr(HS)) - (tdf(HS) + 0.8 tf(HS))
⢠ÎtLS = (tdf(LS) + 0.2 tf(LS)) - (tdr(LS) + 0.8 tr(LS)).
Data Sheet
12
Rev. 2.0, 2010-05-28
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