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BTM7755G Datasheet, PDF (11/24 Pages) Infineon Technologies AG – High Current H-Bridge Trilith IC 3G
High Current H-Bridge
BTM7755G
Block Description and Characteristics
6.2.1 Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
Pos. Parameter
Symbol Limit Values
Unit Test Conditions
Min. Typ. Max.
High Side Switch - Static Characteristics
6.2.1 On state high side resistance RON(HS)
–
–
6.2.2 Leakage current high side IL(LKHS)
–
–
6.2.3 Reverse diode
VDS(HS)
forward-voltage high side 2)
–
–
–
Low Side Switch - Static Characteristics
mΩ
IOUT = 1 A
VS = 13.5 V
60
–
Tj = 25 °C; 1)
85
115
Tj = 150 °C
µA
VINH = VIN1 = VIN2 = 0 V
VOUT = 0 V
–
1
Tj < 85 °C; 1)
–
5
Tj = 150 °C
V
0.9 –
0.8 –
0.6 0.8
IOUT = -1 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
6.2.4 On state low side resistance RON(LS)
–
–
mΩ
IOUT = -1 A
VS = 13.5 V
90
–
Tj = 25 °C; 1)
150 180
Tj = 150 °C
6.2.5 Leakage current low side -IL(LKLS)
µA
VINH = VIN1 = VIN2 = 0 V
VOUT = VS
–
–
1
Tj < 85 °C; 1)
–
–
3
Tj = 150 °C
6.2.6 Reverse diode
VSD(LS)
forward-voltage low side 2)
–
–
–
1) Not subject to production test, specified by design.
V
0.9 –
0.8 –
0.6 0.8
IOUT = 1 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
2) Due to active freewheeling diode is conducting only until related switch is on
Data Sheet
11
Rev. 2.0, 2010-05-28