BTM7755G Datasheet, PDF (10/24 Pages) Infineon Technologies AG – High Current H-Bridge Trilith IC 3G

High Current H-Bridge
BTM7755G
Block Description and Characteristics
6.2
Power Stages
The power stages of the BTM7755G consist of p-channel vertical DMOS transistors for the high side switches and
n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located
in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize
power dissipation in the forward operation of the integrated diodes.
The on state resistance R_ON is dependent on the supply voltage V_S as well as on the junction temperature T_j. The
typical on state resistance characteristics are shown in Figure 7.
High Side Switch
16 0
14 0
12 0
10 0
80
60
40
20
0
4
8 12
T_j = 150°C
T_j = 25°C
T = -40°C
j
16 20 24 28
V_S [V]
Low Side Switch
220
200
180
160
140
120
100
80
60
40
20
0
4
8 12
Figure 7 Typical On State Resistance vs. Supply Voltage
T_j = 150°C
T_j = 25°C
T_j = -40°C
16 20 24 28
V_S [V]
Data Sheet
10
Rev. 2.0, 2010-05-28