BFP460H6327 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Power gain G_ma, G_ms, |S₂₁|² = ƒ (f)
V_CE = 3 V, I_C = 20 mA
50
dB
40
35
30
25
Gms
20
15 |S21|²
10
Gma
5
0
0
1
2
3
4 GHz
6
f
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 20 mA
f = parameter in GHz
24
0.9
dB
20
18
1.8
16
2.4
14
3
12
4
10
5
8
6
6
4
0.5 1 1.5 2 2.5 3 3.5 V 4.5
V_CE
BFP460
Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 3V
f = parameter in GHz
24
0.9
dB
20
18
16
14
12
10
8
6
4
0
10
20
30
Noise figure F = ƒ(I_C)
V_CE = 2 V, f = parameter
Z_S = Z_Sopt
1.8
2.4
3
4
5
6
40 mA
60
I_C
2010-05-17
6