BFP460H6327 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFP460
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Maximum power Gain¹⁾
G_max
I_C = 3 mA, V_CE = 1.5 V, Z_S = Z_Sopt,Z_L = Z_Lopt,
f = 100 MHz
dB
- 26.5 -
I_C = 20 mA, V_CE = 3 V, Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 1,8 GHz
- 17.5 -
f = 3 GHz
- 12.5 -
Transducer gain
I_C = 3 mA, V_CE = 1.5 V, Z_S = Z_L = 50Ω,
f = 100 MHz
I_C = 20 mA, V_CE = 3 V, Z_S = Z_L = 50Ω ,
f = 1.8 GHz
f = 3 GHz
|S _21e|²
dB
-
20
-
-
15
-
- 10.5 -
Third order intercept point at output²⁾
IP₃
V_CE = 3 V, I_C = 20 mA, f = 100 MHz
V_CE = 3 V, I_C = 20 mA, f = 1.8 GHz
1dB compression point at output
P_-1dB
V_CE = 3V, I_C = 20mA , Z_S=Z_L = 50Ω, f = 100 MHz
V_CE = 3V, I_C = 20mA, Z_S=Z_L = 50Ω, f = 1.8 GHz
V_CE = 3V, I_C = 35mA, Z_S=Z_L = 50Ω, f = 1.8 GHz
dBm
- 23.5 -
- 27.5 -
-
9.5
-
- 11.5 -
-
13
-
1_{Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2010-05-17
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