BFP460H6327 Datasheet, PDF(3/11 Page) Infineon Technologies AG

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BFP460H6327 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

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BFP460

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

16 22

IC = 30 mA, VCE = 3 V, f = 1 GHz

Collector-base capacitance

Ccb

- 0.32 0.45

VCB = 3 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Unit

GHz

Collector emitter capacitance

VCE = 3 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.28 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

- 0.55 -

Minimum noise figure

VCE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz

VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz

VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz

NFmin

0.7

1.1

1.2

2010-05-17

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