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BFP460H6327 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
◁
BFP460
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
≤ 250
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
VCE = 2 V, VBE = 0
VCE = 5 V, VBE = 0 , TA = 85°C
Verified by random sampling
V(BR)CEO 4.5
5.8
-V
ICES
nA
-
- 1000
-
1
30
-
2
40
Collector-base cutoff current
VCB = 2 V, IE = 0
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0,5 V, IC = 0
DC current gain
VCE = 3 V, IC = 20 mA , pulse measured
ICBO
IEBO
hFE
-
1
30
-
-
30
-
1 500
90 120 160 -
1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance
2010-05-17
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