BFP460H6327 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Total power dissipation P_tot = ƒ(T_S)
BFP460
Collector-base capacitance C_cb= ƒ(V_CB)
f = 1MHz
260
V
220
200
180
160
140
120
100
80
60
40
20
0
0 15 30 45 60 75 90 105 120 A 150
Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 1800MHz
33
dBm
4V
29
27
3V
25
23
2V
21
19
17
15
13
1V
11
9
7
5
0
10
20
30
40 mA 55
I_C
0.7
pF
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8 10 V
14
V_CB
Transition frequency f_T= ƒ(I_C)
f = 1 GHz
V_CE = parameter
24
GHz
3-4V
2V
20
18
1V
16
14
12
10
8
6
4
0
10
20
30
40 mA
60
I_C
2010-05-17
5