BFP460H6327 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• General purpose low noise amplifier
for low voltage, low current applications
• High ESD robustness, typical 1500V (HBM)
• Low minimum noise figure 1.1 dB at 1.8 GHz
• High linearity: output compression point
OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz
• Easy to use standard package with visible leads
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BFP460
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP460
Marking
Pin Configuration
ABs
1 = E 2 = C 3 = E 4=B -
-
Package
SOT343
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 92°C
Junction temperature
T_J
Ambient temperature
T_A
Storage temperature
T_Stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
4.5
4.2
15
15
1.5
70
mA
7
230
mW
150
°C
-65 ... 150
-65 ... 150
2010-05-17
1