PTFB183404E Datasheet, PDF (5/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up at
Selected Frequencies
V_DD = 30 V, I_DQ = 2.6 A, tone spacing = 1 MHz
-20
1880MHz
1842.5MHz
-30
1805MHz
-40
-50
-60
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Tone Spacing
ƒ = 1842.5 MHz, P_OUT = 330 W (PEP),
V_DD = 30 V, I_DQ = 2.6 A
-10
-15 _{IMD Lower}
-20 IMD Upper
-25
-30
-35 ^IMD3
-40
-45 IMD5
-50
-55 _IMD7
-60
1
10
100
Two Tone Spacing (MHz)
PTFB183404E
PTFB183404F
Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 2.6 A,
ƒ₁ = 1880 MHz, ƒ₂ = 1879 MHz
-20
3rd Order
-30
-40
5th
-50
7th
-60
-70
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Single-carrier Drive-up, 1880 MHz
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 7.5:1,
BW = 3.84 MHz
-25
35
-30
30
-35
Efficiency
25
-40
20
-45
15
-50
ACP Low ¹⁰
-55
ACP Up
5
-60
0
36 38 40 42 44 46 48 50 52 54
Average Output Power (dBm)
Data Sheet
5 of 18
Rev. 04, 2010-11-17