PTFB183404E Datasheet, PDF (4/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 170 W
60
0
50
RL
-10
40
Efficiency
-20
30
IMD3
20
-30
Gain
-40
10
-50
1730 1767.5 1805 1842.5 1880 1917.5 1955
Frequency (MHz)
PTFB183404E
PTFB183404F
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2.6 A,
ƒ₁ = 1880 MHz, ƒ₂ = 1879 MHz
-25
40
-30
35
-35
30
-40
IMD3
25
-45
20
-50
15
-55
10
-60
Efficiency
5
-65
0
39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2.6 A,
ƒ₁ = 1880 MHz, ƒ₂ = 1879 MHz
19
50
18
40
Gain
17
30
16
20
Efficiency
15
10
14
0
40 42 44 46 48 50 52 54 56
Output Power, PEP (dBm)
Two-tone Drive-up (over temp)
(P_OUT-max 3rd order IMD @ -30dBc)
V_DD = 30 V, I_DQ = 2.6 A,
ƒ₁ = 1842.5 MHz, ƒ₂ = 1841.5 MHz
19
50
18
40
Gain
17
30
16
Efficiency
15
20
+85°C
+25°C 10
-30°C
14
0
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Data Sheet
4 of 18
Rev. 04, 2010-11-17