PTFB183404E Datasheet, PDF (16/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

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Package Outline Specifications
Package H-36275-8
2X R1.587
[R.062]
2X 45° X 1.19
[45° X .047]
4X 30°
V1 _D1
13.716
[.540]
CL
2x 2.032
[.080]
REF
D2
9.398
[.370]
R0.508
+ 0 .1 2 7
–0 .5 0 8
[R.020^{+–..002005} ]
E
G1
CL
2X 31.750
[1.250]
G2
CL
4X 11.684
[.460]
35.560
[1.400]
PTFB183404E
PTFB183404F
4X 3.175
[.125]
4X 1.143
[.045]
V2
3.226±0.508
[.127±.020]
S
10.160
CL
[.400]
9.144
[.360]
16.612±.500
[.654±.020]
F
2.134
[.084] SPH
1.626
[.064]
31.242±0.280
[1.230±.011]
CL
4.585
+0. 25
–.1 2 7
4
[.180^{+–..000150} ]
41.148
[1.620]
H - 36275 - 8_po _ 2- 18 -2010
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G1, G2 = gate; D1, D2 = drain; V1, V2 = V_DD; E, F = N.C.; S = source
5. Lead thickness: 0.127 +0.051/–0.025 [.005 +.002/–.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Data Sheet
16 of 18
Rev. 04, 2010-11-17