PTFB183404E Datasheet, PDF (15/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

Confidential, Limited Internal Distribution
Pinout Diagram
V1
D1
V2
D2
S
E
G1
G2
H - 36275-8 _ P D _ 03 -24 - 2010
F
TOP VIEW
V1
D1
V2
D2
S = flange
G1
TOP VIEW
G2
H -37275- 6 /2 _ P D _ 11 -19 -2010
PTFB183404E
PTFB183404F
D1
G1
D2
G2
Pin Description
V1
V_DD Device 1
V2
V_DD Device 2
G1
Gate Device 1
G2
Gate Device 2
D1
Drain Device 1
D2
Drain Device 2
E
N.C.
F
N.C.
S
Source (flange)
Data Sheet
15 of 18
Rev. 04, 2010-11-17