PTFB183404E Datasheet, PDF (2/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

PTFB183404E
PTFB183404F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Single-carrier WCDMA Performance (not subject to production test – verified by design / characterization in Infineon test
fixture)
V_DD = 30 V, I_DQ = 2.6 A, IQ clipping, channel bandwidth = 3.84 MHz, Input signal PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic
Conditions
Symbol 1805 MHz
1842 MHz
1880 MHz

(Typ)
(Typ)
(Typ)
Gain

Drain Efficiency
P_OUT (AVG) = 49 dBm
G_ps
P_OUT (AVG) = 51 dBm
P_OUT (AVG) = 49 dBm
hD
17.1
17.0
25
17.3
17.15
24.5
17.5
17.4
24

P_OUT (AVG) = 51 dBm
31
30
30
Output PAR at 0.01%
P_OUT (AVG) = 49 dBm
dB
6.5
6.5
6.5

P_OUT (AVG) = 51 dBm
5.5
5.5
5.5
Adjacent Channel Power Ratio P_OUT (AVG) = 49 dBm
ACPR
–43
–42.5
–41

P_OUT (AVG) = 51 dBm
–36
–35
–34
Two-tone Specifications (not subject to production test – verified by design / characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 310 W PEP, ƒ = 1880 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
17.5
—
dB
hD
—
35
—
%
Intermodulation Distortion
IMD
—
30
—
dBc
DC Characteristics
Characteristic
Conditions
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
Drain Leakage Current
V_DS = 63 V, V_GS = 0 V
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
Operating Gate Voltage
V_DS = 30 V, I_DQ = 2.6 A
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Data Sheet
2 of 18
Rev. 04, 2010-11-17