PTFB183404E Datasheet, PDF (3/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz

Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 340 W CW)
PTFB183404E
PTFB183404F
Symbol
V_DSS
V_GS
T_J
T_STG
R_qJC
Value
65
–6 to +10
200
–40 to +150
0.2
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB183404E V1
Package Outline
H-36275-8
PTFB183404E V1 R250 H-36275-8
PTFB183404F V2
H-37275-6/2
PTFB183404F V2 R250 H-37275-6/2
Package Description
Ceramic open-cavity, slotted push-pull
Ceramic open-cavity, slotted push-pull
Ceramic open-cavity, earless push-pull
Ceramic open-cavity, earless push-pull
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25
1880 Lower
1880 Upper
-30
1842.5 Lower
1842.5 Upper
-35
1805 Lower
1805 Upper
-40
-45
-50
-55
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Two-carrier WCDMA 3GPP
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84MHz
19
40
18
30
Gain
17
20
16
10
15
36
Efficiency
38 40 42 44 46 48 50
Average Output Power (dBm)
0
52
Data Sheet
3 of 18
Rev. 04, 2010-11-17