PTFA220041M Datasheet, PDF (5/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

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Typical Performance, 1842 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power & VDD
I_DQ = 50 mA, ƒ = 1842 MHz
20.0
60
19.5
Gain
50
19.0
40
18.5
30
18.0
17.5
17.0
24
Efficiency
V_DD = 32 V
V_DD = 28 V
V_DD = 24 V
26 28 30 32 34 36
Output Power (dBm)
20
10
0
38
Intermodulation Distortion
vs. Tone Spacing
V_DD = 28 V, I_DQ = 50 mA, ƒ = 1842 MHz,
P_OUT (PEP) = 4 W
-10
-20
3rd Order
-30
5th
-40
-50
7th
-60
0
20
40
60
80
100
Tone Spacing (MHz)
PTFA220041M
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 50 mA, ƒ = 1842 MHz
22
60
Gain
20
50
18
40
16
+85°C
30
+25°C
Efficiency ^{–30°C}
14
20
30 31 32 33 34 35 36 37 38
Output Power (dBm)
-10
-20
-30
-40
-50
-60
32
Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 1841.9 MHz, ƒ₂ = 1842 MHz
3rd Order
5th
7th
34
36
38
40
Output Power, PEP (dBm)
Data Sheet
5 of 18
Rev. 08, 2010-06-07