PTFA220041M Datasheet, PDF (1/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

PTFA220041M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
4 W, 700 – 2200 MHz
Description
The PTFA220041M is an unmatched 4-watt LDMOS FET intended
for power amplifier applications in the 700 MHz to 2200 MHz oper-
ating range. This LDMOS device offers excellent gain, efficiency
and linearity performance in a small, overmolded plastic package.
PTFA220041M
Package PG-SON-10
Two-tone Drive-up
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 1841.9 M Hz, ƒ₂ = 1842 M Hz
21
60
20
50
Gain
19
40
18
17
33
Efficiency
34
35
36
37
38
Output Power, PEP (dBm)
30
20
39
Features
• Typical two-carrier WCDMA performance,
1842 MHz, 8 dB PAR
- P_OUT = 27 dBm Avg
- ACPR = –44 dBc
• Typical CW performance, 1842 MHz, 28 V
- P_OUT = 37 dBm
- Efficiency = 53.5%
- Gain = 17.9 dB
• Typical CW performance, 940 MHz, 28 V
- P_OUT = 37.5 dBm
- Efficiency = 57%
- Gain = 19.7 dB
• Capable of handling 10:1 VSWR @ 28 V, 5 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Pb-free and RoHS compliant
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 50 mA, P_OUT = 4 W PEP, ƒ = 1842 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
18.5
19
—
dB
hD
35
37.5
—
%
Intermodulation Distortion
IMD
—
–29
–28
dBc
Input Return Loss
IRL
—
–8
–7
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 18
Rev. 08, 2010-06-07