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PTFA220041M Datasheet, PDF (13/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz
PTFA220041M
L1
22 nH
R804
2000 Ohm
TL111
TL112
3
1
2
4
S2
TL115
TL113
R805
10 Ohm S3
3
R803
500 Ohm
TL116
VDD
28 V
C801
1000 pF
C803
1000 pF
R801
1200 Ohm
R802
1300 Ohm
  �          �     �   �    �   �   �  
S5
8
In
1
Out
NC
NC
4
236
75
C802
1000 pF
DCVS
V1
2C
1
4
B
3E
S4
RF_IN
C103
TL104 62 pF
TL105
TL107
2
1
3
C104
10 pF
Er=3.48
H=20 mil
RO/RO4350B1
TL106
TL102
2
1
3
TL103
2
1
3
TL108
TL109
C101
16 pF
C102
22 pF
TL110
R102
10 Ohm
R101
1.3 Ohm
TL101
3
1
2
TL114
GATE DUT
Reference circuit input schematic for ƒ = 940 MHz
TL202 TL201 TL212 TL206
TL205
TL211
DRAIN DUT
C204
62 pF
C201
100000 pF
C202
2200000 pF
TL217
2
1
3
TL213 TL218
3
2
1
TL216
3
  �          �     �   �    �  �  �  
2
1
TL222
TL214
TL204
TL203
3
2
1
VDD
28 V
L2
22 nH
TL215
TL223
TL221 TL219
3
2
1
TL220 TL224
L3
4.3 nH
TL210 TL209
1
2
3
C203
3.6 pF
TL207
C205
62 pF TL208
RF_OUT
Reference circuit output schematic for ƒ = 940 MHz
Data Sheet
13 of 18
Rev. 08, 2010-06-07