PTFA220041M Datasheet, PDF (11/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 50 mA, ƒ = 940 MHz, 3GPP
WCDMA, P/AR = 8:1, 10 MHz carrier spacing
BW 3.84 MHz
22
50
Gain
21
40
20
30
Efficiency
19
20
18
10
17
25
27
29
31
33
Output Power (dBm)
0
35
Two-tone Drive-up
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 939.9 MHz, ƒ₂ = 940 MHz
-5
-10
-15
-20
-25
-30
-35
-40
33
Efficiency
IMD3
34
35
36
37
38
Output Power, PEP (dBm)
55
50
45
40
35
30
25
20
39
PTFA220041M
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 50 mA, ƒ = 940 MHz
22
70
21
Gain
60
20
50
19
40
Efficiency
18
30
17
20
30 31 32 33 34 35 36 37 38
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 939.9 MHz, ƒ₂ = 940 MHz
22
60
Gain
21
50
20
40
19
Efficiency
30
18
33
34
35
36
37
38
Output Power, PEP (dBm)
20
39
Data Sheet
11 of 18
Rev. 08, 2010-06-07