PTFA220041M Datasheet, PDF (4/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

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Typical Performance, 1842 MHz (cont.)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 1841.9 MHz, ƒ₂ = 1842 MHz
-15
70
-20
60
-25
IMD3
50
-30
40
Efficiency
-35
30
-40
33
34
35
36
37
38
Output Power, PEP (dBm)
20
39
PTFA220041M
Two-tone Gain vs. Output Power
V_DD = 28 V, ƒ₁ = 1841.9 MHz, ƒ₂ = 1842 MHz
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
33
I_DQ = 50 mA
I_DQ = 25 mA
I_DQ = 75 mA
I_DQ = 63 mA
34
35
36
37
38
39
Output Power (dBm)
Two-tone Broadband
Gain, Efficiency & RL vs. Frequency
V_DD = 28V, I_DQ = 50 mA, avg P_OUT = 2 W,
tone spacing = 100 kHz
70
5
60
RL
-5
50
-15
Efficiency
40
-25
30
-35
Gain
IMD3
20
-45
10
-55
1720 1760 1800 1840 1880 1920 1960
Frequency (MHz)
Small Signal CW
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 50 mA
20
18
16
14
12
10
1692
Gain
IRL
1792
1892
Frequency (MHz)
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
1992
Data Sheet
4 of 18
Rev. 08, 2010-06-07