PTFA220041M Datasheet, PDF (12/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 940 MHz (cont.)
-10
-20
-30
-40
-50
-60
32
Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 939.9 MHz, ƒ₂ = 940 MHz
3rd Order
5th
7th
34
36
38
Output Power, PEP (dBm)
PTFA220041M
CW
Gain & Efficiency vs. Output Power & V_DD
ƒ = 940 MHz
21.5
60
Gain
21.0
50
20.5
40
20.0
30
19.5
20
19.0
Efficiency
V_DD = 32 V
V_DD = 28 V
V_DD = 24 V
10
18.5
0
24 26 28 30 32 34 36 38 40
Output Power (dBm)
22
20
18
16
14
12
790
Small Signal CW
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 50 mA
0
Gain
-5
-10
-15
IRL
-20
890
990
Frequency (MHz)
-25
1090
Data Sheet
12 of 18
Rev. 08, 2010-06-07