CFY25 Datasheet, PDF (4/8 Pages) Siemens Semiconductor Group – GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

CFY25
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure ¹⁾
NF
V_DS = 3 V, I_D = 15 mA, f = 12 GHz
CFY25-P
CFY25-20, -20P
CFY25-23, -23P
Associated gain. ¹⁾
G_a
V_DS = 3 V, I_D = 15 mA, f = 12 GHz
CFY25-P
CFY25-20, -20P
CFY25-23, -23P
Output power at 1 dB gain compression ²⁾ P_1dB
V_DS = 3 V, I_{D(RF off)} = 20 mA, f = 12 GHz
CFY25-20, -23
CFY25-20P, 23P, -P
Linear power gain ²⁾
G_lp
V_DS = 3 V, I_D = 20 mA, f = 12 GHz,
P_in = 0 dBm
CFY25-20
CFY25-23
CFY25-20P, -P
CFY25-23P
dB
-
< 2.3 -
-
1.9
2.1
-
2.2
2.4
dB
-
> 8.5 -
8.5 9
-
8.0 8.7
-
dBm
-
15
-
14
15
-
dB
-
9.2
-
-
8.5
-
8.5 9.2
-
8.0 8.5
-
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power / linear power gain characteristics given for optimum output power matching
conditions (fixed generic matching, no fine-tuning).
Semiconductor Group
4 of 8
Draft D, Sep. 0000