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CFY25 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
CFY25
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band 1)
Junction temperature
Storage temperature range
Total power dissipation 2)
Soldering temperature 3)
Thermal Resistance
Junction-soldering point
Symbol
VDS
VDG
VGS
ID
IG
PRF,in
TJ
Tstg
Ptot
Tsol
Values
5
7
- 5... + 0.5
80
1.5
+ 17
175
- 65... + 175
250
230
Rth JS
≤ 410
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
K/W
Notes.:
1) For VDS ≤ 3 V. For VDS > 3 V, derating is required.
2) At TS = + 72.5 °C. For TS > + 72.5 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 8
Draft D, Sep. 0000