CFY25 Datasheet, PDF (3/8 Pages) Siemens Semiconductor Group – GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

CFY25
Electrical Characteristics (at T_A=25°C; unless otherwise specified)
Parameter
DC Characteristics
Drain-source saturation current
V_DS = 3 V, V_GS = 0 V
Gate threshold voltage
V_DS = 3 V, I_D = 1 mA
Drain current at pinch-off
V_DS = 3 V, V_GS = - 4 V
Gate leakage current at pinch-off
V_DS = 3 V, V_GS = - 4 V
Transconductance
V_DS = 3 V, I_D = 15 mA
Gate leakage current at operation
V_DS = 3 V, I_D = 15 mA
Thermal resistance
junction to soldering point
Symbol
min.
Values
Unit
typ. max.
I_Dss
15
30
60 mA
-V_Gth
0.3
1.0
3.0 V
I_Dp
-
< 100 -
µA
-I_Gp
-
< 100 200 µA
g_m15
35
40
-
mS
-I_G15
-
<1 2
µA
R_{th JS}
-
370 -
K/W
Semiconductor Group
3 of 8
Draft D, Sep. 0000