CFY25 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)

CFY25
HiRel X-Band GaAs Low Noise / General Purpose MESFET
• HiRel Discrete and Microwave
Semiconductor
4
3
• For professional pre- and driver-amplifiers
• For frequencies from 500 MHz to 20 GHz
• Hermetically sealed microwave package
1
2
• Low noise figure, high gain, moderate power
•
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 01 to 05
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY25-P (ql)
CFY25-23 (ql)
CFY25-23P (ql)
CFY25-20 (ql)
CFY25-20P (ql)
Marking Ordering Code Pin Configuration Package
1234
-
see below
G S D S Micro-X
CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62703F120
on request
on request
Q62703F119
Semiconductor Group
1 of 8
Draft D, Sep. 0000