TLE7269G Datasheet, PDF (3/34 Pages) Infineon Technologies AG – Twin LIN Transceiver

Twin LIN Transceiver
TLE7269G
1
Overview
Features
• Two stand-alone LIN transceivers up to 20 kBaud transmission rate
• Pin compatible to single LIN Transceivers (e.g TLE7259-2GE/GU)
• Compliant to LIN specification 1.3, 2.0, 2.1 and SAE J2602
• Very high ESD robustness, ± 8 kV according to IEC61000-4-2
• Optimized for low electromagnetic emission (EME)
• Optimized for high immunity against electromagnetic interference (EMI)
• Very low current consumption in sleep mode with Wake-Up functions
• Wake-Up source detection on Wake-Up disable function
• Very low leakage current on the BUS output
• Control output for voltage regulator
• Digital I/O levels compatible for 3.3 V and 5 V microcontrollers
• Bus short to V_BAT protection and Bus short to GND handling
• Over-temperature and Under-voltage protection
• Flash mode and Low-Slope Mode
• Green Product (RoHs compliant)
• AEC compliant
PG-DSO-14
Description
The TLE7269G is a transceiver for the Local Interconnect Network (LIN) with integrated Wake-Up and protection
features. It is designed for in-vehicle networks using data transmission rates from 2.4 kBaud to 20 kBaud. The
TLE7269G functions as a bus driver between the protocol controller and the physical bus inside the LIN network.
Compliant to all LIN standards and with a wide operational supply range the TLE7269G can be used in all
automotive applications.
Two stand-alone LIN transceivers are integrated on one monolithic circuit inside TLE7269G. Both transceivers
offer different operation modes and separate INH outputs to control external circuitry, like voltage regulators. In
Sleep-mode the TLE7269G draws less than 10 µA of quiescent current for both integrated LIN Transceivers, while
both transceivers are still able to wake up off of LIN bus traffic or the local Wake-Up input. The very low leakage
current on the BUS pins makes the TLE7269G especially suitable for partially supplied networks and supports the
low quiescent current requirements of the LIN network.
Based on the Infineon Smart Power Technology SPT^®, the TLE7269G provides excellent ESD robustness
together with a very high electromagnetic immunity (EMI). The TLE7269G reaches a very low level of
electromagnetic emission (EME) within a broad frequency range and independent from the battery voltage.
The Infineon Smart Power Technology SPT^® allows bipolar and CMOS control circuitry in accordance with DMOS
power devices to exist on the same monolithic circuit. The TLE7269G and the Infineon SPT^® technology are AEC
qualified and tailored to withstand the harsh conditions of the Automotive Environment.
Type
TLE7269G
Data Sheet
Package
PG-DSO-14
3
Marking
7269G
Rev. 1.2, 2007-11-13