TLE7269G Datasheet, PDF (28/34 Pages) Infineon Technologies AG – Twin LIN Transceiver

TLE7269G
Application Information
7
Application Information
7.1
ESD Robustness according to IEC61000-4-2
Test for ESD robustness according to IEC61000-4-2 “Gun test” (150 pF, 330 Ω) have been performed. The results
and test conditions are available in a separate test report.
Table 8 ESD Robustness according to IEC61000-4-2
Performed Test
Result Unit
Electrostatic discharge voltage at pin V_S, BUS1 ≥ +9
kV
and BUS2 versus GND
Electrostatic discharge voltage at pin V_S, BUS1 ≤ -9
kV
and BUS2 versus GND
Electrostatic discharge voltage at pin WK versus ≥ +8
kV
GND
Electrostatic discharge voltage at pin WK versus ≤ -8
kV
GND
Remarks
1)_{Positive pulse}
1)_{Negative pulse}
1)_{Positive pulse}
1)_{Negative pulse}
1) ESD susceptibility “ESD GUN” according LIN EMC 1.3 Test Specification, Section 4.3. (IEC 61000-4-2) -Tested by external
test house (IBEE Zwickau, EMC Testreport Nr. 05-06-06).
7.2
Pin Compatibility to the Single LIN Transceivers
The Twin LIN Transceiver TLE7269G is pin and function compatible to the Single LIN Transceivers like the
TLE7259G, the TLE7259-2GE and its derivative the TLE7259-2GU. The TLE7269G has a pin for the V_IO supply.
This supply pin is usually connected to the power supply of the external microcontroller. The TLE7259G and the
TLE7259-2GE/U don’t have a V_IO pin. In order to provide the same functions on the TLE7259G and TLE7259-
2GE/GU, these two LIN transceiver need an external pull-up resistor between the RxD pin and the microcontroller
supply.
RxD1
1
14
INH1
RxD
1
8
INH
EN
2
WK
3
13
V_S
EN
2
12
BUS1
WK
3
7
V_S
6
BUS
TxD1
4
11
GND
TxD
4
5
GND
TxD2
5
10
BUS2
V_IO
RxD2
6
9
7
8
TLE7269G
W2O
INH2
TLE7259G
TLE7259-2GE
TLE7259-2GU
and other single LIN
transceivers
Figure 16 Pin configuration TLE7269G and TLE7259G, TLE7259-2GE/GU
Data Sheet
28
Rev. 1.2, 2007-11-13