TLE7269G Datasheet, PDF (24/34 Pages) Infineon Technologies AG – Twin LIN Transceiver

TLE7269G
Electrical Characteristics
Table 7 Electrical Characteristics (cont’d)
7.0 V < V_S < 27 V; R_L = 500 Ω; V_io = 5V; -40 °C < T_j < 125 °C; all voltages with respect to ground; positive current
flowing into pin; unless otherwise specified.
Pos. Parameter
Symbol Limit Values
Unit Remarks
Min. Typ. Max.
6.1.52 Leakage current
I_{BUS_PAS_dom} -1
–
–
mA V_S = 18 V; V_BUS = 0 V;
LIN Spec 2.1 (Par. 13)
6.1.53 Leakage current
I_{BUS_PAS_rec} –
–
20
µA V_S = 8 V; V_BUS = 18 V;
LIN Spec 2.1 (Par. 14)
6.1.54 Bus pull-up resistance
6.1.55 LIN output current
R_slave
20
I_BUS
-60
6.1.56 Input Capacitance
Ci _BUS
–
Dynamic Transceiver Characteristics: BUS1, BUS2
6.1.57 Propagation delay
LIN bus to RxD
Dominant to RxD Low
Recessive to RxD High
t_{rx_pdf}
–
t_{rx_pdr}
–
6.1.58 Receiver delay symmetry
t_{rx_sym}
-2
6.1.59 Delay time for mode Change t_MODE
–
6.1.60 TxD1 Setup time for mode t_TXD,SET –
selection
6.1.61 TxD dominant time out
6.1.62 TxD dominant time out
recovery time
t_timeout
6
t_torec
–
6.1.63 EN toggling to enter the flash t_fl1
25
mode
6.1.64 TxD1 time for flash activation t_fl2
5
t_fl3
10
t_fl4
10
30
47
-30 -5
15
–
1
6
1
6
–
2
–
120
–
50
12
20
–
15
35
50
–
–
–
–
–
–
kΩ Normal mode
LIN Spec 2.1 (Par. 26)
µA Sleep mode
V_S = 13.5 V; V_EN = 0 V
pF ¹⁾
LIN Spec 2.1 (Par. 31)
V_io = 5 V;
µs ^C_RxD ^{= 20 pF}
µs
µs LIN Spec 2.1 (Par. 32)
t_{rx_sym} = t_{rx_pdf}- t_{rx_pdr};
V_io = 5 V;
C_RxD = 20 pF
µs ¹⁾ See Figure 5, Figure 6
µs ¹⁾ See Figure 5, Figure 6
ms V_TxD = 0 V
µs ¹⁾
µs ¹⁾ See Figure 7
µs ¹⁾ See Figure 7
Data Sheet
24
Rev. 1.2, 2007-11-13