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TLE7181EM Datasheet, PDF (24/29 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC
H-Bridge and Dual Half Bridge Driver IC
TLE7181EM
Electrical Characteristics - Current sense signal conditioning (cont’d)
VS = 7.0 to 36V, Tj = -40 to +150°C, gain = 5 to 75, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.3.10 High level output voltage of ISO VOH
4.75 –
5.2
V
IOH=-3mA
5.3.11
5.3.12
5.3.13
5.3.14
Output short circuit current
ISCOP
Differential input resistance1)
RI
Common mode input capacitance1) CCM
Common mode rejection ratio at
DC
CMRR
CMRR =
20*Log((Vout_diff/Vin_diff) *
(Vin_CM/Vout_CM))
5
–
–
100 –
–
–
–
10
80
100 –
mA –
kΩ –
pF 10kHz
dB –
5.3.15 Common mode suppression2) with CMS
–
CMS = 20*Log(Vout_CM/Vin_CM)
Freq =100kHz
Freq = 1MHz
Freq = 10MHz
–
62
43
23
dB
VIN=360mV*
sin(2*π*freq*t);
Rs=500Ω;
Rfb=7500Ω
5.3.16 Slew rate
dV/dt
–
10
–
5.3.17 Large signal open loop voltage gain AOL
(DC)
80
100 –
V/µs
dB
Gain≥ 5;
RL=1.0kΩ;
CL=500pF
–
5.3.18 Unity gain bandwidth1)
GBW
10
20
–
MHz RL=1kΩ; CL=100pF
5.3.19 Phase margin 1)
FM
–
50
–
°
Gain≥ 5;
RL=1kΩ; CL=100pF
5.3.20 Gain margin 1)
AM
–
12
–
dB
RL=1kΩ; CL=100pF
5.3.21 Bandwidth
BWG
0.7
1.3
–
MHz
Gain=15;
RL=1kΩ;
CL=500pF;
Rs=500Ω
5.3.22 Output settle time to 98%
5.3.23 Output settle time to 98%1)
tset1
–
tset2
–
1
1.8
µs
Gain=15;
RL=1kΩ;
CL=500pF;
0.3<VISO< 4.8V;
Rs=500Ω
4.6
–
µs Gain=75;
RL=1kΩ;
CL=500pF;
0.3<VISO< 4.8V;
Rs=500Ω
1) Not subjected to production test; specified by design
2) Without considering any offsets such as input offset voltage, internal mismatch and assuming no tolerance error in external
resistors.
Data Sheet
24
Rev 1.1, 2010-09-30