TLE7181EM Datasheet, PDF (23/29 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7181EM
5.3
Shunt Signal Conditioning
The TLE7181EM incorporates a fast and precise operational amplifier for conditioning and amplification of the
current sense shunt signal. The gain of the OpAmp is adjustable by external resistors within a range higher than 5.
The usage of higher gains in the application might be limited by required settling time and band width.
It is recommended to apply a small offset to the OpAmp, to avoid operation in the lower rail at low currents.
The output of the OpAmp ISO is not short-circuit proof.
V_DD
R _shunt
R_S1
R_REF1
ISP
R_S2
ISN
R_REF2
external
TLE718xEM
+
ISO
-
ERR
+
- _VOCTH
Figure 6
R_FB
R_FB=(R _REF1 ||R _REF2 )
Shunt Signal Conditioning Block Diagram and Over Current Limitation
Over current warning see Chapter 5.2.8.
5.3.1 Electrical Characteristics
Electrical Characteristics - Current sense signal conditioning
V_S = 7.0 to 36V, T_j = -40 to +150°C, gain = 5 to 75, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.3.1 Series resistors
R_S
5.3.2 Feedback resistor
R_fb
Limited by the output voltage
dynamic range
100 500 1000 Ω
–
2000 7500 –
Ω
–
5.3.3
5.3.4
Resistor ratio (gain ratio)
Steady state differential input
voltage range across VIN
R_fb/RS
V_IN(ss)
5
–
-400 –
–
–
–
400 mV –
5.3.5
5.3.6
5.3.7
5.3.8
5.3.9
Input differential voltage (ISP - ISN) V_IDR
Input voltage (Both Inputs - GND) V_LL
(ISP - GND) or (ISN -GND)
Input offset voltage of the I-DC link V_IO
OpAmp, including temperature drift
Input bias current (ISN,ISP to GND) I_IB
Low level output voltage of ISO V_OL
-800 –
-800 –
–
–
-300 –
-0.1 –
800 mV –
2000 mV –
+/-2 mV R_S=500Ω; V_CM=0V;
V_ISO=1.65V;
–
µA
V_CM=0V; V_ISO=open
0.2
V
I_OH=3mA
Data Sheet
23
Rev 1.1, 2010-09-30